The proven performance and reliability of GaN technology make it an ideal choice for infrastructure, defense, and aerospace applications, such as radar, communications, navigation, and similar applications. Increased performance capabilities offer designers the flexibility to reduce board footprint and system costs while improving system performance.
The Qorvo QPD1025L, available from Mouser Electronics, is a high electron mobility transistor (HEMT) that supports both continuous wave and pulsed wave (CW) operation to more efficiently deliver performance comparable to silicon-based LDMOS devices. Powered from a 65V rail, the device offers a linear gain of 22.5dB and a typical power efficiency (PAE3dB) of 77.2%. The QPD1025L features an internal pre-input, simplifying external board compatibility and saving board space.
The lead-free, RoHS compliant transistor is compatible with the QPD1025L evaluation board.
