Therefore, they are ideal for power supply units (PSUs) in high-energy-consuming artificial intelligence (AI) server infrastructures, telecommunications equipment, and solar inverter applications.
These new Schottky diodes offer cutting-edge performance thanks to their temperature-independent capacitive switching and zero recovery behavior, providing an exceptional index of merit (QC x VF). Furthermore, they exhibit switching performance that is almost entirely independent of current variations and switching speed. The fused PiN Schottky (MPS) structure of these devices offers additional advantages, such as exceptional robustness against surge currents, as demonstrated by their high forward peak current (IFSM). This characteristic reduces the need for additional protection circuitry, significantly lowering system complexity and enabling engineers to achieve greater efficiency by using smaller form factors in robust high-voltage applications.
The PSC20120J is packaged in a Real-2-Pin D2PAK R2P (TO-263-2) surface-mount (SMD) power plastic package, while the PSC20120L is packaged in a Real-2-Pin TO-247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages enhance device reliability in high-voltage applications at operating temperatures up to 175°C. Designers can have even greater peace of mind thanks to Nexperia's reputation as a proven manufacturer of high-quality semiconductor products across a wide range of semiconductor technologies, supported by a robust supply chain.
