Other Semiconductors
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- Category: Other Semiconductors
Navitas Semiconductor has announced a new family of ultra-high voltage silicon carbide (SiC) power modules, designed for energy conversion applications in power grids, storage systems, and artificial intelligence data centers.
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- Category: Other Semiconductors
Allegro MicroSystems has announced the expansion of its robotics component catalog with 48V power management solutions and high-precision position sensors, designed to improve motion control in humanoid robots and other physical artificial intelligence (Physical AI) systems.
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StarPower Semiconductor has introduced the MD53HFL120L2S_B20, a power module based on silicon carbide (SiC) MOSFET transistors, designed for high-voltage applications in the industrial and automotive sectors. The device is rated at 1200 V and 120 A and incorporates a half-bridge topology consisting of two series-connected N-channel SiC MOSFETs.
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Toshiba Electronics Europe has expanded its power semiconductor portfolio with the launch of the IX800FXF2YMS4, a dual silicon carbide (SiC) MOSFET module designed for industrial power conversion and control equipment. The new device incorporates Toshiba's third-generation SiC MOSFETs and features a nominal drain-source voltage (VDSS) of 3,300 V and a nominal DC drain current (ID) of 800 A.
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Renesas Electronics has introduced the TP65H020G4PLSGBD, a 650V GaN device developed for high-density power conversion systems used in 800V HVDC architectures for artificial intelligence data centers.
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ROHM has developed the RS4P063BPHZG, a 100V MOSFET optimized for automotive safety functions and protection circuits. The new product achieves an industry-leading* wide SOA (Safe Operating Area) across a broad voltage range in the standard HPLF5060 (size 5060) package, widely used in automotive applications.
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ROHM has developed 4th generation 650V IGBTs, ideal for electric compressors and high-voltage heaters in the automotive sector, as well as for inverters in industrial equipment. As automotive-grade 650V class products,
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ROHM has developed a new range of 600V superconnect MOSFETs, the R60xxXNx and R60xxWNx series. In the data center and industrial equipment sectors, power demand continues to rise as processing loads increase, driving strong demand for more efficient power supplies to reduce both energy consumption and heat generation.
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Toshiba Electronics Europe GmbH (“Toshiba”) has introduced the TPM1R408RH, an 80V N-channel power MOSFET based on the company’s latest U-MOS11-H process technology. Designed for high-efficiency industrial switched-mode power supplies for data center equipment and communications base stations,
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Timing systems for spacecraft must provide highly stable and accurate signals to navigation, communications, and scientific instruments, even when GNSS signals are weak or unavailable.
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NOVOSENSE Microelectronics has announced the launch of the SP301H/L series, a family of three-channel digital isolators based on its patented third-generation capacitive isolation technology.
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Navitas Semiconductor has announced the launch of its new UHV-TO-247-4-ISO package, setting a new benchmark for high-performance discrete power devices. With a leakage distance of over 12 mm between pins and integrated isolation exceeding 6000 V,
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