As a trusted provider of power solutions, onsemi offers high-quality SiC devices, a reliable supply chain, and comprehensive design support.

The ebook includes helpful links to selected onsemi power products, such as the EliteSiC NTBG014N120M3P MOSFET. The NTBG014N120M3P is a 1200V M3P planar SiC MOSFET optimized for power applications. The planar technology operates reliably with negative gate voltage drives and suppresses gate spikes. This device is ideal for use in solar inverters, electric vehicle charging stations, energy storage systems, and switched-mode power supplies.

The EliteSiC NVBG1000N170M1 MOSFET, available at Mouser.com, is a 1700V M1 planar device optimized for fast-switching applications. This device is AEC-Q101 certified and PPAP compliant, making it ideal for use in electric vehicles (EVs) and hybrid electric vehicles (HEVs). In EVs and HEVs, the advantages of SiC devices translate into smaller, lighter, and more efficient power solutions. Less energy is wasted, resulting in a reduced number of batteries required.

The NCP51705 gate driver is primarily designed to control SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable of supplying the maximum allowable gate voltage to the SiC MOSFET device. By providing a high peak current during turn-on and turn-off, switching losses are minimized.

The NCP51560 isolated dual-channel gate driver is designed for fast switching to drive SiC MOSFET power switches. Two independent, galvanically isolated door driver channels can be used in any possible configuration of two low-side switches, two high-side switches, or a half-bridge driver with programmable dead time. The NCP51560 offers other important protection features, such as independent undervoltage lockout for both door drivers.

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