The cost of data centers was already largely determined by electricity, so this increase in consumption has only underscored the importance of energy efficiency in these facilities. In Powering AI: High-Density Power Distribution in Modern Data Centers, leading experts in the AI industry discuss topics such as the shift to higher-voltage power supplies and the role of digital power technologies in improving energy efficiency. The videos demonstrate how liquid cooling enables increased server density and how the use of gallium nitride (GaN) and more efficient metal-oxide-semiconductor field-effect transistors (MOSFETs) in power circuitry helps reduce the weight and size of power systems. The ebook also includes an interactive infographic explaining the power flow in a standard data center. Renesas has a long history in the field of energy management and offers its customers a wide range of products and solutions; many of these are featured in the book. These are some of the Renesas products that can be purchased through Mouser:
Renesas' REXFET-1 power MOSFETs feature a pinless, ultra-compact design that improves thermal performance, manageability, and reliability. Thanks to the REXFET-1 wafer manufacturing process, it's possible to reduce the on-conduction resistance of the devices by up to 30% and the gate charge (Qg) by up to 10%, resulting in increased efficiency.
The ISL99390FRZ Smart Power Stage (SPS) module offers the highest accuracy on the market for line current, load, and temperature sensing. When combined with a Renesas digital PWM controller, it enables highly accurate system power management and the best transient response for load line-based regulators. These devices simplify design by eliminating the need for typical DC current sensing (DCR) networks and associated thermal compensation components.
The ISL68239 12-phase PWM controller utilizes Renesas' proprietary digital synthetic current modulation scheme to achieve an industry-leading combination of transient response, tunability, and efficiency for all loads. Developers can easily configure and monitor the device using the intuitive Renesas PowerNavigator™ software.
The TP65H015G5WS SuperGaN® FET combines an advanced high-voltage GaN HEMT with a low-voltage silicon MOSFET, delivering superior reliability and performance. The device employs advanced epitaxy (epi) technologies and proprietary designs to simplify the manufacturing process and improve efficiency compared to silicon by reducing gate charge, output capacitance, switching losses, and reverse recovery charge.
