This latest addition to Toshiba's power semiconductor range responds to the growing demand for compact and energy-efficient solutions in high-power infrastructures.
The ST2000JXH35A incorporates newly developed trench-type IEGT chips with an optimized cell structure to deliver high switching capacity and robust short-circuit withstand performance. These technical improvements allow the device to offer a significant upgrade over Toshiba's existing ST1700JXH26A by increasing the shutdown test voltage from 3600 V to 4500 V. Furthermore, the product has successfully passed short-circuit tests at 4500 V, confirming its suitability for applications requiring high operational stability under heavy electrical loads.
A key advantage of the ST2000JXH35A is its ability to optimize the design of high-voltage systems. By adopting this product with a nominal voltage of 6500 V, engineers can reduce the number of series-connected devices required in DC power transmission architectures. This reduction in the number of components directly contributes to weight reduction and miniaturization of overall equipment designs. Consequently, these improvements help reduce construction and transportation costs, providing added value for offshore wind farm converter stations, where installation costs and logistical complexity are significant.
The product features a press-pack design that allows for cooling from both sides and a hermetically sealed structure to ensure the reliability required for long-term industrial operation. In addition to transmission infrastructure, the ST2000JXH35A enables higher rated voltages and more compact form factors for industrial motor drives and reactive power compensation devices that stabilize power systems.
Toshiba plans to continue expanding its range of pressed-pack IEGTs to further support advancements in high-voltage converter technology.
Follow the link below for more information about the new product: ST2000JXH35A
Follow the link below for more information about Toshiba's IEGT (PPI)
