Toshiba Electronics Europe has unveiled its new silicon carbide (SiC)-based Schottky barrier diodes (SBDs) in the second generation of semiconductor technology.These SBDs offer current densities up to 50% higher than first-generation devices and can operate with higher peak forward currents.
The use of SiC semiconductors helps designers improve efficiency, reduce heat dissipation, and save space in high-speed power switching designs. SiC power devices also offer stable operation over a wider temperature range than silicon alternatives, even at high voltages and currents.
With its second-generation SiC process, Toshiba has been able to reduce the die thickness to develop SBDs with current densities 1.5 times (1.5x) higher than first-generation devices. Furthermore, the second generation of SiC SBDs will offer superior initial non-repetitive peak forward current (IFSM) ratings.
The first products in the second generation of the range will be 650V devices with current ratings of 4A (TRS4E65F), 6A (TRS6E65F), 8A (TRS8E65F), and 10A (TRS10E65F) in TO-220 2-pin and isolated TO-220 2-pin packages, designated TRS..A65F. These diodes will be ideal for high-speed switching power conversion designs, including power factor correction (PFC) schemes, photovoltaic inverters, and uninterruptible power supply (UPS) systems. Toshiba's SiC SBDs can also be used to improve the switching efficiency of power supplies by replacing conventional silicon diodes.
