Specifically, the partners aim to become mutually alternative sources of select packages for SiC power devices, a move that will increase design and procurement flexibility for their customers. In the future, customers will be able to purchase devices with compatible housings from both ROHM and Infineon. The collaboration will ensure seamless compatibility and interchangeability to meet specific customer needs.
“We are very excited to be working with ROHM to further accelerate the adoption of SiC power devices,” said Dr. Peter Wawer, president of Infineon’s Green Industrial Power division. “Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization.”.
“ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon is an important step toward achieving this goal, as it expands our solutions portfolio,” said Dr. Kazuhide Ino, Member of the Board of Directors and Executive Director in charge of ROHM’s power device business. “By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, which will ultimately shape the future of the power electronics industry.”.
As part of the agreement, ROHM will adopt Infineon's innovative superior cooling platform for SiCs, which includes TOLT, D-DPAK, Q-DPAK, dual Q-DPAK, and H-DPAK packages. Infineon's superior cooling platform offers several advantages, including a standardized height of 2.3 mm for all packages. This simplifies designs and reduces cooling system costs, while also enabling better board space utilization and up to twice the power density.
At the same time, Infineon will adopt ROHM's DOT-247 package with a SiC half-bridge configuration to develop a compatible package. This will expand Infineon's recently announced Double TO-247 IGBT range to include SiC half-bridge solutions. ROHM's advanced DOT-247 offers higher power density and reduces assembly effort compared to standard discrete packages. With a unique structure integrating two TO-247 packages, it reduces thermal resistance by approximately 15% and inductance by 50% compared to the TO-247. These advantages result in a power density 2.3 times higher than that of the TO-247.
ROHM and Infineon plan to expand their collaboration in the future to include other silicon power and broadband technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.
SiC-based semiconductors have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while also allowing for even smaller designs. With SiC products from ROHM and Infineon, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems, and AI data centers.
