With peak power outputs reaching 150 mW, the new Everlight IR LEDs are available with beam angles from 20° to 160°. A wide range of input voltages (up to 4V) is supported. These emitters are housed in surface-mount packages (1206 or 3216 form factor) as well as through-hole versions with capsule diameters from 1.5 mm to 5 mm. Clear, transparent, and blue lenses are available.
Everlight PIN photodiodes exhibit high photosensitivity, with a dark current noise of only 5 nA or 10 nA. They also have maximum reverse voltage levels of 32V. Thanks to their fast response time (down to 6 ns), these devices can be combined with IR LEDs (with which they are spectrally matched) to create photosensing systems for applications requiring high-frequency operation. Surface-mount and through-hole devices are available. Plano and convex lens options, as well as optical filtering, are offered.
With a maximum wavelength of 940 nm, the Everlight phototransistors currently offered by TME are designed for a maximum collector-emitter voltage of 30V. A variety of packaging options are available, including through-hole and surface-mount.
Commenting on the new product additions, TME co-founder and business development director Adam Kuczyński states, “The technical and financial pressures engineers face mean they need optoelectronic devices that achieve high-performance benchmarks and offer cost-effectiveness as well as long-term reliability. The Everlight IR LEDs, PIN photodiodes, and phototransistors we now offer meet all these requirements.”
