With each new generation of products, today's portable device designers face the challenge of providing greater functionality in less space while using less power. To meet this demand, the devices introduced feature ATCSR (Auto Temperature Compensated Self-Refresh) to minimize power consumption at low ambient temperatures. Additionally, their PASR (Partial Array Self-Refresh) feature reduces power consumption by updating only critical data, while Deep Low Power (DPD) mode provides an ultra-low power state when data retention is not required.
As the number of mobile DDR SDRAM vendors continues to decline, Alliance Memory offers designers a new source for their low-power needs. The company's AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1, and AS4C64M32MD1 provide reliable drop-in, pin-compatible replacements for a range of similar high-bandwidth solutions and high-performance memory system applications in portable consumer electronics, medical equipment, and network devices.
With their dual data rate architecture, mobile DDR SDRAMs offer high-speed operation with clock speeds of 166 MHz and 200 MHz. For optimal performance in harsh environments, all devices are available in extended temperature ranges (-30°C to +85°C) and industrial ranges (-40°C to +85°C). Mobile DDR SDRAMs offer fully synchronous operation and provide programmable read or write burst lengths of 2, 4, 8, or 16. A pre-load feature provides a self-programmed pre-load row initiated at the end of the burst sequence. User-friendly refresh features include auto and self-refresh. RoHS compliant, the devices are lead- and halogen-free.
