The new TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z MOSFETs achieve a 40% reduction in the figure of merit (FoM) of drain-source resistance (RDSON)x drain-gate charge (Qgd)compared to the previous generation of DTMOS. This translates into a substantial reduction in switching losses compared to earlier devices. Consequently, designs incorporating these new devices will experience increased efficiency. The performance improvement will apply to both new designs and upgrades of existing ones.
 
The four new devices offer a drain-source voltage (V<sub>DSS</sub>) of 650 V with a drain current capability (I<sub>D) of up to 30 A. The drain-source turn-on resistance (R<sub>DSON</sub>) is as low as 0.09 Ω, and the gate drain charge (Q<sub>gd</sub>) can be as low as 7.1 nC, enabling low-loss operation at high speeds. All devices are packaged in the industry-standard TO-220 through-hole package.
 
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