This family works with currents of 4 A to 20 A in the single configuration and with currents of 16 A to 40 A in the dual configuration.
SiC Technology:
SiC-based wideband Schottky diodes are designed for high-performance AC/DC and DC/DC converters, such as PFC and output rectification in ultra-high-frequency DC/DC applications. The SiC diode represents a step forward in converter efficiency, improving power density and reliability. Active switch switching losses are reduced, minimizing turn-on stress. Increased switching frequency and power density can be achieved without cooling issues.
Benefits of Vishay SiC Technology
: • Virtually zero reverse recovery losses, invariant with temperature and operating conditions.
• Purely capacitive switching, with no losses within the diode.
• Good peak current.
• High forward current-to-capacitance ratio.
• Low leakage at high temperatures.
• Low induced losses in the active switch.
• Improved EMI.
Vishay SiC Diode Family:
The Vishay SiC portfolio covers the most common current ratings, from small to large. All devices have breakdown voltages of 650 V and a maximum TJ of 175 °C. Available packages are 2L TO-220AC single-diode or 3L TO-247AD dual common-cathode configurations.
