Already in production, 3D XPoint technology is a major advance in memory processing technology and marks the first time a new category has been introduced since the arrival of NAND flash memory in 1989.    

The non-volatile nature of the technology also makes it a great choice for a variety of low-latency storage applications since the data is not erased when the device is turned off.

The innovative crossover architecture with fewer transistors creates a three-dimensional checkerboard design where memory cells are located at the intersection of word and bit lines, allowing cells to be treated individually. As a result, data can be written and read in small batches, enabling a faster and more efficient read and write process.

Other details about 3D XPoint technology include:
• Cross Point Array Structure – Perpendicular conductors connect 128 million densely packed memory cells. Each memory cell stores a single bit of data. This compact structure provides high performance and high bit density.  
• Stackable – In addition to the tight cross point array structure, the memory cells are stacked in multiple layers. The initial technology stores 128 GB per die in two memory layers. Subsequent generations of this technology can increase the number of memory layers, as well as the traditional lithographic pitch scaling, further improving system capacity.
• Selector – Memory cells are accessed, and data is written to or read from, by varying the amount of voltage sent to each selector. This eliminates the need for transistors, increasing capacity while reducing cost.
• Fast-switching cell – With a small cell size, a fast switching selector, a low-latency cross-point array, and a
fast-write algorithm, this cell is capable of changing states faster than any other non-volatile memory technology available today.
 
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