The new PQFN2x2 devices, characterized by their footprint of only 4 mm2They are available for voltages of 20V, 25V and 30V, with standard port or logic level control, and utilize IR's most advanced low-voltage silicon technologies for N-channel and P-channel in order to offer low on-conducting resistance (RDS(on)) and high power density in line with a PQFN3.3x3.3 or PQFN5x6 package.
The PQFN2x2 family includes P-channel devices optimized for use on the high-potential side of load break switches, where they offer a simpler control solution. These devices, characterized by a low profile of less than 1 mm, are compatible with existing surface-mounting techniques, have a standard footprint, and are RoHS compliant.
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- Category: Discreet
Ultra-compact PQFN2x2 IR power MOSFET for low power applications
International
Rectifier expands its package offering with the introduction of a 2mm x 2mm PQFN package that incorporates the most advanced IR silicon technology for HEXFET® MOSFETsin an ultra-compact, efficient, high-density solution aimed at a wide variety of low-power applications, including advanced mobile phones (smartphones), tablet PCs, video recorders, digital cameras, laptops, servers, and communications networking equipment.
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