The new device combines an ultra-low on-state resistance (RDS(ON)) with fast switching performance to help designers improve system efficiency and reduce power losses.
Compared to the TPM1R908QM, an 80V product manufactured using the previous generation U-MOS XH process, the TPM1R408RH achieves an approximately 26% lower RDS(ON) of 1.4 mΩ (max.) with a gate-source voltage (VGS) of 10V and a drain current (ID) of 50A, helping to minimize conduction losses in demanding power designs.
To further improve efficiency, the new MOSFET optimizes the balance between RDS(ON) and the total gate charge (Qg), achieving 80 nC. The factor of merit (FOM) [RDS(ON) × Qg] is approximately 45% lower (1.4 mΩ × 80 nC = 112 mΩ·nC) compared to the TPM1R908QM (1.9 mΩ × 108 nC = 205.2 mΩ·nC). These characteristics reduce switching losses and suppress voltage spikes generated between the drain and source during switching, which helps reduce electromagnetic interference (EMI) and enables high-speed switching in switched-mode power supplies (SMPS).
The TPM1R408RH supports a drain-source voltage of 80 V and a maximum drain current (ID) of 288 A (Tc = 25 °C), making it suitable for high-current industrial applications. The device comes in Toshiba's compact SOP Advance(E) package, which reduces package resistance by approximately 65% and thermal resistance by approximately 15% compared to the existing SOP Advance(N) package, enabling more space-efficient system designs.
Toshiba also offers tools that simplify circuit design for switched-mode power supplies. In addition to the SPICE G0 model, which quickly verifies circuit operation, SPICE G2 models that accurately reproduce transient characteristics.
Toshiba will continue to expand its range of power MOSFETs that improve the efficiency of power supplies, thus helping to reduce the energy consumption of equipment.
