The module is designed for applications requiring power devices capable of operating at high voltages and handling transient current conditions. Potential applications include inverters and converters for rail transport, solid-state transformers, uninterruptible power supplies, energy storage systems, and industrial motor control equipment.
Third-generation SiC MOSFET with 3,300 V and 800 A.
The IX800FXF2YMS4 utilizes third-generation silicon carbide MOSFET devices developed by Toshiba. Its two main nominal parameters are a drain-source voltage of 3,300 V and a DC drain current of 800 A. These characteristics place the module within the realm of high-voltage power conversion systems.
SiC technology is used in this type of application due to its operating characteristics in power switching devices, although the actual performance depends on the converter design, operating conditions, and cooling system.
Diode Surge Current Capacity:
One of the features highlighted by Toshiba is the diode's behavior in the module under transient currents. The manufacturer specifies an I²t value of 300 kA²s under the following test conditions:
- Initial channel temperature (Tch): 175 °C.
- Gate-source voltage (VGS): −6 V.
- Waveform: a single half-sine pulse.
- Pulse duration: 10 ms.
- Indicated repetition factor (FR): 1%.
The I²t parameter represents the integral of the squared current with respect to time and is used to characterize the electrical and thermal stress associated with certain overcurrent events.
Conduction Voltage and Switching Losses:
Toshiba provides typical electrical behavior values for the IX800FXF2YMS4. The drain-source voltage in the conduction state, measured by sensing (VDS(on)sense), is 1.4 V under the following conditions:
- Drain current: 800 A.
- Gate-source voltage: +20 V.
- Channel temperature: 25 °C.
The manufacturer also specifies the typical on- and off-switching energies:
Parameter Typical Value
On-energy (Eon) 185 mJ
Off-energy (Eoff) 175 mJ
These values were obtained with a supply voltage of 1800 V, a drain current of 800 A, and a channel temperature of 175 °C.
The Eon and Eoff energies represent the energy dissipated during switching events under the specified measurement conditions.
To estimate the switching losses of a converter, it is necessary to consider, among other factors, the operating frequency, electrical conditions, and the behavior of the gate drive circuit.
The IX800FXF2YMS4 uses Toshiba's iXPLV (Intelligent Flexible Package Low Voltage) package.
Its
construction incorporates a silver (Ag) sintering process for securing the chip. According to the manufacturer, this technique is intended to improve the thermal performance and reliability of the junction between the semiconductor and the module structure. The device supports a nominal channel temperature of 175 °C.
Applications in rail transport and power conversion:
Toshiba targets the module to various industrial systems that utilize high-voltage semiconductor devices.
In the rail sector, the IX800FXF2YMS4 is intended for power inverters and converters. It is also envisioned for use in solid-state transformers, which employ power electronics for electrical conversion and control functions.
Other applications mentioned include uninterruptible power supplies (UPS) and energy storage systems, where power semiconductors are part of the conversion stages. The manufacturer also includes industrial motor control equipment among the device's potential applications.
Selecting the module for any of these applications requires verifying additional parameters, such as cooling conditions, operating voltage, insulation requirements, electrical protections, and load profile.
Four SiC modules in the iXPLV range
With the addition of the IX800FXF2YMS4, Toshiba expands its range of SiC MOSFET modules with iXPLV packaging to four products.
