“This additional long-term SiC substrate supply agreement complements the external capacity we have already secured and the internal capacity we are increasing. This will allow ST to increase the volume and balance of wafers we will need to meet growing customer demand for automotive and industrial programs in the coming years,” said Jean-Marc Chery, President and CEO of STMicroelectronics.
“SiCrystal is a ROHM Group company, a leading company in the SiC sector, and has been manufacturing SiC wafers for many years. We are very pleased to sign this supply agreement with ST, a long-standing customer of ours. We will continue to support our partner in expanding the silicon carbide business by continuously increasing wafer quantities and providing reliable quality at all times,” says Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM Group company.
The adoption of power solutions using SiCs is accelerating in both the automotive and industrial markets. With this agreement, the two companies will contribute to the widespread use of SiC in these markets.
