The CL15M45/CL20M/CL40M45 SMD current-limiting diodes offer parallel operation for increased current rating (IP), providing a durable, high-performance solution for applications such as low-power LED drivers and battery chargers. With a power dissipation of 1 W, a reverse voltage of 0.5 V, and an operating junction temperature of -50 °C to +150 °C, these current-limiting diodes deliver commercial-grade performance in an SMB package.
The MMBT7002K channel-enhancement mode FETs offer exceptional performance for signal processing, logic level converter, and driver applications. These FETs provide fast switching times with an ESD-protected gate and an operating junction temperature range of -55 to +150 °C. The MMBT7002K FETs feature a power dissipation of 350 mW, a gate-source voltage of 20 V, and a drain-source voltage of 60 V. Diotec Semiconductor's BAV99x small-signal diodes offer high switching speeds with low junction capacitance and low leakage current.
The BAV99x diodes are manufactured with UL 94V-0 listed case materials, and devices with the -AQ suffix in the product number have achieved AEC-Q101 qualification. These diodes support a range of applications, including signal processing, rectification, and high-speed switching. The EGL1x ultrafast recovery rectifiers feature an impressive reverse voltage (VR) range of 50 to 400 V and a peak repetitive reverse voltage (VRRM) of 50 to 400 V. These high-performance diodes offer high power dissipation and enable high-frequency rectification.
