GaN is a next-generation semiconductor technology gaining traction for its ability to deliver superior performance compared to conventional silicon semiconductors, while reducing the power and physical footprint required to achieve that performance. It operates up to 20 times faster than silicon and can also enable three times faster power handling or charging capability, along with its size advantages, leading to potentially 20% lower system costs for power system designers, engineers, and architects.

Navitas' GaNFast™ power ICs with GaNSense™ technology integrate power, drive, and control capabilities, as well as self-contained protection and lossless current sensing, to deliver energy efficiency, the smallest footprints, and the fastest power conversion performance. The company's latest GaNSense half-bridge IC family offers a fully integrated, single-component solution that enables AC-DC power supplies to achieve MHz switching frequencies across a wide range of soft-switching applications.