The electrification of automobiles, the increasing high-power requirements of 5G telecommunications equipment, and the rise of Industry 4.0 demand energy conversion efficiencies for which GaN is expected to become the dominant technology. These trends underpin the growing demand for power semiconductors in 2021 and beyond. The UAES has already begun using Nexperia's GaN FETs in R&D and collaborative projects, including vehicle-mounted chargers and high-voltage DC-DC converters for electric vehicles. Nexperia's GaN technology boasts exceptionally good performance figures (RDS(on) x QGD) and reverse recovery charge (Qrr) that support high switching frequencies and efficient power conversion. Nexperia produces GaN using mature and reliable mass production techniques, largely at its own global manufacturing facilities, to produce products in accordance with AEC-Q101 automotive standards.
UAES provides automakers with advanced and comprehensive solutions for body control systems and powertrains. It specializes in the development, production, and sales of gasoline engine management systems, transmission control systems, vehicle body electronics systems, and hybrid and electric propulsion control systems. Its five technology centers in China boast world-class laboratories for the development of complete vehicles, engines, automatic transmissions, and electric propulsion systems. Advanced equipment efficiently delivers high-quality engineering services, including systems development, component development, and calibration, to various Chinese automakers.
Paul Zhang, Senior Vice President of Sales and Marketing and General Manager of Nexperia in China, commented, “The power density and efficiency of silicon-based GaN field-effect transistors will play a critical role in the electrification of automobiles. We recognize UAES’s broad offering, industry position, and customer base in the automotive industry and believe that our intensified collaboration on GaN will help both companies deliver more advanced and efficient electric vehicle power system solutions to our customers. Earlier this month, we announced an increase in global production and R&D investment to fully support new product development. We intend to expand our investments and jointly establish a laboratory to develop GaN technology applications for automotive applications.”
A spokesperson for UAES management stated: "We are delighted to be working with Nexperia on the development of innovative electric vehicle power system solutions based on GaN technology. Nexperia is a leading supplier of semiconductors for automotive applications. This partnership will help us reduce the number of devices used, lower costs, increase power density, and improve the reliability and efficiency of the entire system."
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Nexperia and United Automotive Electronic Systems Co. agree to a partnership for GaN
Nexperia has announced a comprehensive partnership covering gallium nitride (GaN) power semiconductor devices with United Automotive Electronic Systems Co. (UAES). The program will focus on electric vehicle power systems, with the goal of jointly developing automotive applications using GaN technology.
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