After initiating mass production of its 150V GaN HEMTs—featuring an 8V gate breakdown voltage—in 2022, ROHM developed the control IC technology in March 2023 to maximize GaN performance. Now, ROHM has developed the market-leading 650V GaN HEMTs, contributing to greater efficiency and a smaller footprint across a wider range of power systems.
The GNP1070TC-Z and GNP1150TCA-Z offer industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a key factor of merit for GaN HEMTs, resulting in increased efficiency in power supply systems. Simultaneously, an integrated ESD protection element enhances electrostatic breakdown resistance up to 3.5 kV, thereby increasing application reliability. The high-speed switching characteristics of GaN HEMTs also contribute to further miniaturization of peripheral components.
ROHM continues to improve device performance through its EcoGaN™ range of GaN devices, which contributes to greater energy savings in applications and further miniaturization. While developing ROHM products, we also foster collaborative development through strategic partnerships to help solve societal challenges by making applications more efficient and compact.
EcoGaN™
is ROHM's new range of GaN devices, which contribute to energy savings and miniaturization by maximizing the characteristics of GaN with the aim of achieving lower energy consumption in applications, smaller peripheral components, and simpler designs that require fewer parts.
Product range
Application examples
Ideal for a wide range of power supply systems in industrial equipment and consumer devices, including servers and AC adapters.
Ancora Semiconductors Inc.
is a subsidiary of Delta Electronics, a global provider of thermal and energy management solutions. Ancora was founded in July 2022 and focuses on the development of GaN devices and technology.
GaN HEMT
Terminology:
GaN (gallium nitride) is a compound semiconductor material used in next-generation power devices. Its adoption is increasing due to its superior properties compared to silicon, as demonstrated by its excellent high-frequency characteristics.
HEMT stands for High Electron Mobility Transistor.
RDS(ON) × Ciss / RDS(ON) × Coss
is an index for evaluating switching performance, where Ciss refers to the overall capacitance from the input side and Coss from the output side.
The lower this value, the faster the switching speed and the lower the switching losses.
ESD (electrostatic discharge)
is an overvoltage that occurs when charged objects, such as the human body and electronic equipment, come into contact. This type of overvoltage can cause abnormal operation or destruction of circuits and equipment.
