Like existing products in the TL1L4 series, [¹GaN-on-Si technology has been used to create LEDs optimized for both light output and energy efficiency. However, the new 4A5B type improves upon existing products, providing a luminous flux of 140lm (min.)²], compared to 130LM (min.) [²]. The new products allow us to meet market demands for improved lighting efficiency by achieving efficiencies of more than 110lm/W [³LEDs can also contribute to reducing the energy consumed by LED lighting.
Measuring 3.5 mm x 3.5 mm and featuring a top lens, the new LEDs offer different correlated color temperature (CCT) levels: the TL1L4-DW0 provides 6500K, the TL1L4-nt0 provides 5700K, the TL1L4-NW0 provides 5000K, and the TL1L4-WH0 provides 4000K. All offer a minimum color rendering index (CRI) of RA70 and a typical forward voltage of 2.8 V.
Grades:
[1] Technology for producing gallium nitride (GaN) wafers on silicon (Si).
[2] Test conditions: IF = 350mA, Tj = 85 °C
[3] Under conditions of 90% conductor efficiency, 90% optical efficiency, Tj = 85°C

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