ROHM's original package processing technology enables the miniaturization of high-quality automotive components, such as ADAS camera modules.
In recent years, the increasing number of vehicle safety and comfort systems, such as ADAS cameras, has highlighted the challenge of limited space for these systems and driven demand for smaller components. To meet this need, bottom-electrode MOSFETs, which can be miniaturized while maintaining high current, are attracting increasing attention.
However, for automotive applications, optical inspection is performed during the assembly process to ensure quality, but in the case of background electrode components, the weld height cannot be verified after assembly, making it difficult to confirm the assembly conditions.
ROHM has a proven track record of developing and introducing new products ahead of market trends, and this is precisely the case with its new ultra-compact MOSFETs. This time, ROHM has become the first in the industry to ensure the required electrode height on the package side (130 µm) for automotive applications using its original Wettable Flank technology. The result is consistent weld quality—even for bottom-electrode products—allowing automated optical inspection (AOI) machines to easily verify weld conditions after assembly.
ROHM is committed to developing compact products that take advantage of this technology, including transistors and bipolar diodes, allowing us to expand our extensive product range and achieve greater miniaturization while providing greater reliability.
Key Features
1. Patented Wettable Flank Technology Ensures a 130 µm Electrode Height on the Package Side
ROHM's Wettable Flank technology involves making a cut within the lead frame on the package side before metallizing. However, burr formation as a result of this cut can occur more frequently as the cut height increases.
In response, ROHM has developed a unique method that introduces a barrier layer across the entire surface of the lead frame to minimize burr formation. This not only prevents component rise and solder defects during assembly but is also the first on the market to guarantee a 130 µm electrode height on the package side of DFN1616 (1.6 x 1.6 mm) packages.
2. Compact Bottom-Electrode MOSFETs Reduce Mounting Area.
Until recently, Schottky barrier diodes (SBDs) were commonly used in reverse polarity protection circuits for ADAS camera modules. But because high-resolution cameras require higher currents in advanced vehicle systems, SBDs are increasingly being replaced by compact MOSFETs that offer low on-resistance and less heat generation. For
example, with a current and power consumption of 2.0 A and 0.6 W, respectively, conventional automotive MOSFETs can reduce the mounting area by 30% compared to SBDs. However, the adoption of back-electrode MOSFETs capable of providing excellent heat dissipation, while supporting large currents in an even smaller form factor, allows the mounting area to be reduced by up to 78% compared to conventional SBDs and by 68% compared to conventional MOSFETs.
Range
Availability: immediate (samples), September 2019 (OEM quantities)
Automated Optical Inspection (IOA)
Terminology
IOA involves scanning circuit boards with a camera to inspect for missing components or quality defects.
Wettable Flank Technology:
A technique that makes a cut in the lead frame on the side of the bottom electrode encapsulation such as QFN and DFN before metallization.
