This expansion responds to the growing demand for ultra-efficient conversion in high-power systems, and incorporates devices designed for current capacities up to 608 A and a junction-to-shell thermal resistance of only 0.07 ºC/W (in the standard 62 mm S3 half-bridge format).
The six-pack modules integrate the three-phase power stage into a compact package and feature an RDSon range of 19.5 to 82 mΩ. They are designed to optimize layout and minimize parasitic noise in advanced AC-DC converters and motor drives.
The full-bridge modules offer current capacities up to 120 A and an ultra-low conduction resistance of only 8.6 mΩ. This combination, along with a low thermal resistance of 0.28 °C/W, maximizes power density and efficiency in single-phase inverters and high-voltage DC-DC systems.
All components undergo wafer-level gate oxide burn-in testing to ensure oxide quality. They are also tested with breakdown voltages exceeding 1350 V. Modules based on these third-generation chips operate at lower gate voltages than previous generations, thanks to a gate voltage range of 18 V / -4.5 V. SemiQ's Gen3 technology reduces both RONsp and power-off losses (EOFF) by up to 30% compared to previous generations.
Dr. Timothy Han: “The charging infrastructure for electric vehicles and new industrial applications require ever-increasing levels of performance. With leading current density and significantly lower conduction resistance, our new Gen3 full-bridge, half-bridge, and six-pack modules help organizations meet these demands.”
