Thanks to their L-TOGL packages and the resulting improved heat dissipation characteristics, Toshiba's new MOSFETs are highly optimized for handling large currents. Each features high drain current ratings (400 A for the XPQR3004PB and 200 A for the XPQ1R004PB), as well as industry-leading turn-on resistance values ​​(0.3 mΩ for the XPQR3004PB and 1 mΩ for the XPQ1R004PB).

These devices have no internal pole structure (soldered connection). This is achieved by connecting the source and external leads with an innovative copper clip. The use of a multipole structure for the source leads reduces package resistance (and associated losses) by approximately 70% compared to the existing TO-220SM(W) package. The nominal drain current (ID) of the XPQR3004PB represents a 60% increase over the current TKR74F04PB, housed in the TO-220SM(W) package. Furthermore, the robust copper frame substantially reduces the thermal impedance between the junction and the case. It is 0.2 °C/W for the XPQR3004PB and 0.65 °C/W for the XPQ1R004PB. This facilitates heat dissipation, reduces operating temperatures, and improves reliability.

Designed for use in demanding automotive applications at temperatures up to 175 °C, the XPQR3004PB and XPQ1R004PB models are AEC-Q101 certified. Their gull-wing leads reduce assembly stress and facilitate visual inspection, thus contributing to improved solder joint reliability.

When used in high-current automotive applications, such as semiconductor relays or integrated starter generators (ISGs), the XPQR3004PB and XPQ1R004PB simplify designs and reduce the number of MOSFETs required. This results in reduced size, weight, and cost.

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