With a maximum VDSS value of 150V and a current flow (ID) of 64A, the new device features an active drain-source resistance (RDS(ON)) of only 9.0mΩ (max). This represents a reduction of more than 40% compared to the previous generation TPH1500CNH1 product.
In high-performance power supply solutions using synchronous rectification, reverse recovery performance is critical. By incorporating a high-speed body diode, the new TPH9R00CQ5 reduces the reverse recovery charge (Qrr) by approximately 74% (to a typical 34nC) compared to an existing device like the TPH9R00CQH. Furthermore, the reverse recovery time (trr) of only 40ns represents an improvement of over 40% compared to previous devices.
Along with a low gate charge (Qg) of only 44 nC, these improvements significantly contribute to reducing losses and increasing power density in high-performance, power-efficient solutions. A channel temperature of 175°C (max.) is exceptional for high-speed diode MOSFETs and will offer designers greater thermal headroom.
The new device also reduces voltage spikes created during switching, thereby improving the EMI characteristics of designs and reducing the need for filters. It is housed in a versatile surface-mount SOP Advance(N) package measuring only 4.9 mm x 6.1 mm x 1.0 mm.
To assist designers, Toshiba has developed a SPICE G0 model to quickly verify circuit operation, as well as highly accurate SPICE G2 models to accurately reproduce transient characteristics.
In addition, designers have access to advanced reference designs, already available on the Toshiba website. These include a 1 kW non-isolated buck-boost DC-DC converter, a MOSFET-based three-phase multilevel inverter, and a 1 kW full-bridge DC-DC converter, all of which utilize the new TPH9R00CQ5.
Orders for the new device begin today, and Toshiba will continue to expand its range of power MOSFETs that reduce energy losses and increase the efficiency of switched-mode power supplies, helping to improve equipment efficiency.
