Microchip Technology introduces its MPLAB® SiC Power Simulator, which quickly evaluates Microchip's SiC power devices and modules in various topologies before moving from design to hardware to help power design engineers adopt SiC power solutions with ease, speed, and confidence.
Microchip's MPLAB SiC Power Simulator is a PLECS-based software environment designed in collaboration with Plexim to provide a free online tool, eliminating the need for a simulation license. The MPLAB SiC Power Simulator accelerates the design process for various SiC-based power topologies. Customers can confidently compare and evaluate SiC solutions during the design phase.
“Customers interested in SiC technology can now use the web-based MPLAB SiC Power Simulator to compare and select the best Microchip SiC product for their design,” said Clayton Pillion, vice president of Microchip’s silicon carbide business unit. “Microchip, which has invested in silicon carbide for more than two decades, provides our customers with versatile power solutions in its SiC portfolio that can be easily designed with other Microchip devices.”
The tool can accelerate time to market thanks to a comprehensive evaluation of SiC that not only provides valuable data but also reduces component selection time. A power electronics designer who needs to decide between a 25 mΩ and a 40 mΩ SiC MOSFET for a three-phase input active converter can obtain simulation results immediately, such as average power dissipation and peak junction temperatures of the devices.
MPLAB SiC Power Simulator is a prime design tool for OEM manufacturers designing power systems for electromobility, sustainability, and industrial applications such as electric vehicles, on-board and external charging systems, power supplies, and battery storage systems.
Microchip's SiC portfolio includes the best power module packages on the market with the lowest parasitic inductance (<2.9 nH) and the most advanced 3.3 kV discrete MOSFETs and diodes with the highest current ratings. The SiC portfolio also includes unpackaged, discrete devices and 700V, 1200V, and 1700V modules, as well as AgileSwitch® configurable gate drivers.
These SiC devices are notable for their robustness and performance, offering a gate oxidation lifetime that is projected to exceed 100 years, as well as structural diodes without degradation. SiC technology provides higher levels of system efficiency, power density, and temperature stability than silicon IGBTs (Insulated-Gate Bipolar Transistors) in high-power applications.
