By improving the FoM of the gate drain-resistance x QGD (RDS(on) x QGD) by more than 80%, Toshiba's latest SiC technology raises the driving and switching performance in power conversion topologies.
Furthermore, the new devices contain the embedded Schottky barrier diode (SBD), proven in the previous generation. The integrated SBD improves the reliability of SiC MOSFETs by overcoming internal parasitic effects to maintain a stable RDS(on) for the device.
Furthermore, the products have a wide gate source voltage range, from -10V to 25V, increasing flexibility for operation in various circuit designs and application conditions. The gate threshold voltage (VGS(th)) range of 3.0V to 5.0V ensures predictable switching performance with minimal drift and allows for simplified gate driver design.
The third generation of SiC MOSFETs is now available: TW015N120C, TW030N120C, TW045N120C, TW060N120C and TW140N120C. These devices have RDS(on) values from 15mΩ to 140mΩ (typical, at VGS = 18V) and drain current values from 20A to 100A (DC at TC=25°C).
All devices are in full production and ready to be ordered from distributors, in the standard TO-247 power package.
