Resonant circuits and snubbers are essential for efficient power conversion and for suppressing current and voltage spikes. In both circuits, repeated exposure to high voltage and high current can cause even slight changes in component performance, leading to a loss of efficiency or heat generation, and potentially causing malfunction or failure. Recent trends also show a shift in power supply switching devices from silicon MOSFETs to silicon carbide (SiC) MOSFETs, which offer higher efficiency and faster switching. SiC MOSFET applications require breakdown voltages of 1.2 kV, driving demand for capacitors with ratings exceeding this specification. Therefore, these applications require capacitors that maintain stable performance over wide temperature ranges, minimize power loss, and withstand high operating voltages.
Leveraging Murata's proprietary ceramic and electrode materials, thin-layer molding technology, and high-precision layering technology, the new 1.25 kV MLCC addresses these needs and is compatible with the latest SiC MOSFET technologies. The inherent advantages of C0G, compliant with EIA standards (low loss and stable capacitance over an operating temperature range of -55 °C to +125 °C), make the new product ideal for use in both resonant and snubber circuits. For greater design flexibility, the capacitance range spans from 4.7 nF to 15 nF, with a tolerance of ±1% to ±5%.
