EPC's eGaN integrated circuits and field-effect transistors (FETs) offer significantly higher performance than the best silicon (Si) power metal-oxide-semiconductor field-effect transistors (MOSFETs) in applications such as DC-to-DC converters, remote sensing technologies such as light detection and location (LiDAR), motor control for electric mobility, robotics and drones, among other applications.
The goal of the agreement is to expand access to GaN technology for engineers worldwide and accelerate the adoption of high-efficiency power solutions.
“This global agreement with Mouser is part of our distribution strategy to reach more engineers who want to implement their designs with GaN because of its advantages over silicon,” said Nick Cataldo, senior vice president of sales and marketing at EPC. “Mouser has a fantastic global reach, and it’s a pleasure to partner with such a dynamic company.”.
“EPC’s range of high-performance power solutions is an excellent complement to our portfolio of brands and meets our customers’ needs,” said Heather McGriff, vice president of supplier management at Mouser. “It’s a pleasure to build a long-term relationship and offer these innovative technologies to the global engineering community.”.
The EPC2302, now available from Mouser, is a 100V eGaN power transistor with a maximum drain-source on-resistance (RDS(on)) of 1.8 mΩ in a low-inductance, 3 × 5 mm quad flat terminalless (QFN) package. Its exposed top ensures excellent thermal management. It is designed for high-frequency 40-60V DC-to-DC applications and 48V brushless DC (BLDC) motor drivers. The exposed top enhances thermal management, and the side-wettable edges ensure that the entire surface of the side pad is wetted with solder during reflow, protecting the copper and allowing soldering on this outer edge for easy optical inspection. The eGaN FET's ultra-low capacitance and zero reverse recovery current ensure efficient operation in many topologies. Performance is further improved thanks to the compact, low-inductance package.
The EPC2304 eGaN power transistor is designed for applications requiring ultra-high switching frequency and low turn-on time, as well as applications where on-state losses are significant. It is well-suited for motor drivers, Class D audio, wireless power transmission, and power factor correction (PFC) converters. The EPC2304 is offered in a thermally enhanced 3 × 5 mm QFN package with an exposed top and ultra-low thermal resistance to maintain lower operating temperatures. The package also features wettable edges for easier assembly and inspection.
The EPC23102 ePower™ power stage IC includes an input logic interface, high-side level shift, bootstrap synchronous load, and gate drivers, along with eGaN output FETs, in a single monolithic QFN package with a humidity sensitivity level of 1 (MSL1). This is achieved using EPC's proprietary GaN IC technology. The result is a power stage IC that translates logic-level control signals to a high-voltage, high-current power stage that is easier to design, smaller, and easier to manufacture, while also offering more efficient operation. This device is ideal for motor driver inverters, Class D audio amplifiers, half-bridge and full-bridge LLC converters, and many other applications.
The EPC2305 is a 150V eGaN power transistor that reduces switching and gate driver losses compared to the best silicon MOSFETs, enabling increased power density thanks to its improved efficiency, smaller size, and higher switching frequency. This allows for smaller inductors and fewer capacitors. Typical applications for the EPC2305 include phones, laptops, gaming PCs, power tools, home robotics, electric vehicles, and solar energy systems.
