With the EcoGaN™ series, ROHM Semiconductor offers designers a broad portfolio of GaN components to meet all their needs: whether it's discrete GaN HEMTs (150 V or 650 V), optimized gate drivers, other controllers, or integrated power stage devices.
ROHM's EcoGaN™ technology can effectively reduce component volume by up to 90% and power losses by up to 55% compared to silicon MOSFETs. Fewer passive components are required thanks to the significantly higher switching capacity of the GaN device. The series is designed for ease of use: GaN devices in enhancement mode (normally off) provide best-in-class gate-source voltage (150V class) within a high-heat-dissipation, low-parasitic-inductance package. With the industry's highest factor of merit (FOM), built-in electrostatic discharge protection (650V class), and minimized leakage inductance, EcoGaN™ components enable system miniaturization and reduced power consumption.
At PCIM 2024 (June 11-13 in Nuremberg, Germany), ROHM will be exhibiting at booth 304 in Hall 9, showcasing more than just the EcoGaN™ series. ROHM will also be presenting other key products, including 4th Gen SiC MOSFETs, gate drivers, and smart low-side power devices. ROHM's power products are designed to meet the evolving needs of various industries and contribute to a more sustainable future
