The Wolfspeed CG2H40xx and CG2H30070 GaN HEMT transistors offer best-in-class reliability and a choice of two package types: a screw-on flange package or a solder-on pellet package. Designed with the same 0.4 μm footprint as previous devices, the new HEMTs can be used as direct replacements in existing applications. These transistors are capable of high-frequency operation up to 6 GHz and offer 62 percent efficiency in PSAT.
The high efficiency and wide bandwidth of Wolfspeed's CG2H40xx and CG2H30070 GaN HEMT transistors enable RF design engineers to quickly and easily increase the performance of their RF amplifiers. These transistors are an ideal choice for a wide range of RF power amplifier applications, from military communications and radar equipment to commercial RF applications in the industrial, healthcare, and scientific sectors.
Wolfspeed's CG2H40xx and CG2H30070 GaN HEMTs are compatible with the CG2H4004F-TB and CG2H30070F-TB1 demo boards, which allow engineers to efficiently evaluate Wolfspeed HEMTs. The CG2H4004F-TB development board operates in a frequency range of DC to 4 GHz, while the CG2H30070F-TB1 development board operates in a frequency range of 0.5 GHz to 3 GHz.
