This family enables the creation of power converters with industry-leading conversion efficiency and high power density. Furthermore, the series includes an optional parallel Schottky barrier diode to further reduce switching losses in high-temperature environments.
Two of the six devices in the family feature an RDS(on) of only 1 mΩ and a power density of 240 W/in³ in their 62 x 152 mm package.
The QSiC Dual3 has been developed to allow for the replacement of IGBT modules with minimal redesign. All MOSFET chips have undergone wafer-level gate oxide burn-in testing, exceeding 1,450 V. The modules also feature low junction-to-case thermal resistance, facilitating a simplified system design with smaller, lighter heatsinks.
“The growing power and thermal management demands driven by AI in data centers are pushing traditional cooling and power systems to their limits,” said Dr. Timothy Han, president of SemiQ. “With a flexible design and industry-leading power density, the QSiC Dual3 Series supports 250 kW liquid chiller applications in both active front-end and compressor drives, reducing size and weight compared to traditional silicon IGBT solutions while delivering maximum SiC efficiency.”
