Nexperia's 650V enhancement-mode GaN FETs offer RDS(on) values from 80 to 190 mΩ in a selection of 5x6 mm and 8x8 mm DFN packages, increasing power conversion efficiency in high- and low-voltage (<650V) telecommunications/data communication, consumer charging, solar, and industrial applications. They can also be used to design brushless DC motors and precision microserver drives with higher torque and power. Nexperia also offers a 100V (3.2 mΩ) GaN FET in a WLCSP8 package and a 150V (7 mΩ) device in an FCLGA package. These devices are suitable for a wide variety of low-voltage (<150 V) and high-power applications to deliver, for example, more efficient DC-DC converters in data centers, faster charging (e-mobility and USB Type-C™), smaller LiDAR transceivers, lower-noise class D audio amplifiers, and higher power density consumer devices such as mobile phones, laptops, and video game consoles.
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- Category: Other Semiconductors
Nexperia FET GAN for low and high voltage applications
Mouser now offers gallium nitride power FETs (GaN FETs) in e-mode (enhancement mode) for low (100-150 V) and high (650 V) voltage applications from Nexperia. These GaN power FETs offer improved power density through reduced conduction and switching losses. These GaN devices are ideal for consumer and industrial power applications, such as network, automation, and communications infrastructure.
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