Continuously expanding its portfolio based on its comprehensive in-house manufacturing capabilities, ROHM introduces the first-of-its-kind 650V/6, 8, and 10A SBDs, supplied in a TO220AC package. These new diodes boast the lowest VR and IR across the entire temperature range of all commercially available SiC SBDs. Furthermore, they offer high surge current capability, making them suitable for power supply applications.

SiC diodes exhibit stable temperature characteristics and ultra-short reverse recovery time compared to silicon-based devices, making them ideal for high-speed switching. With extremely stable low forward voltage at high temperatures, SiC SBDs also ensure minimal reverse current.

Compared to the single-gang SBD structure of the 2nd generation, this 3rd generation incorporates a PN junction structure along with a Schottky barrier, ensuring durability in bipolar operation.
Overall, these features contribute to the ongoing trend of high efficiency, high power density, and very robust designs.

Key Specifications [650V / 10A Product Rated]
V_{_F} @ 10A (25°): typ. 1.35V
V_{_F} @ 10A (150°): typ. 1.44V
I_{_R} (25°): typ. 0.03μA @ 650V

Max. Temperature: 175°
I_FSM 50Hz, 1 pulse: 82A

Third-generation SiC SBDs in A-220AC packages are now available.
Low
-current devices in D2PAK (LPTL) packages will be available in June.

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