Known as the TRSxxx65H series, the new devices utilize a new Schottky metal. The 3rd generation SiC SBD chip optimizes the Schottky junction barrier (JBS) structure of the 2nd generation products, thereby reducing the electric field at the Schottky interface and leakage current, resulting in increased efficiency.
The 3rd generation devices achieve an excellent low forward voltage (VF) of 1.2 V (typ.). This represents a 17% reduction compared to the 2nd generation products. The new 3rd generation products have improved the offsets between VF and total capacitive load (QC), which is typically 17 nC for the TRS6E65H.
The voltage-to-reverse current (IR) ratio has also been improved compared to 2nd generation products, with the TRS6E65H achieving a typical IR value of 1.1µA. All these improvements reduce power dissipation and contribute to increased efficiency in end-user equipment.
The TRSxxx65H series devices are capable of withstanding DC forward currents (IF(DC)) up to 12 A and non-repetitive square wave surge currents (IFSM) up to 640 A. Seven of the new devices are housed in TO-220-2L packages, while the remaining five are supplied in compact, flat DFN8×8 SMD packages.
