The safety of lithium-ion batteries is enhanced by robust protection circuits that minimize heat generation during charging and discharging. To achieve the required charging performance, these circuits must have low power consumption. Given the compact nature of these solutions, the appropriate MOSFETs must be small and thin while also offering low junction resistance.
The new 20 A SSM14N956L is designed for a 12 V source-to-source voltage (VSSS) and utilizes Toshiba's microprocessor, just like the previously released 13.5 A SSM10N954L. This ensures excellent low turn-on resistance (RSS(ON)) characteristics, as low as 1 mΩ, limiting conduction losses. Furthermore, the process provides a low gate-to-source leakage current (IGSS) of ±1 µA (max.), enabling low power consumption in standby mode. Together, these attributes allow for extended battery runtime between charges.
In order to fit into the limited space available in these applications, the new SSM14N956L is designed as a chip-scale package, known as TCSPED-302701. Its dimensions are only 2.74 mm x 3.0 mm, with a typical height of just 0.085 mm.
