The new CMZBxxA series products feature a flat structure and are designed as successors to the CMZBxx series products with a plateau structure, which have been announced to be reaching the end of their useful life (EOL).
The innovative flat structure enables low reverse current and high reliability, as the PN junction is protected with an oxide film. Furthermore, precise process adjustments ensure minimal variation in the Zener voltage between devices.
The new products offer protection against transient overvoltage pulses as well as long-duration overvoltage pulses, which are typically difficult for ESD protection diodes to handle. In equipment power lines, switching surges with wide pulses, lasting up to milliseconds, can occur when the circuit switches. The new Zener diodes can protect semiconductor devices from switching surges and near-DC overvoltage pulses.
Compared to the CMZBxx series, the new products improve the Zener voltage specification range from ±10% (typical) to ±5% (typical) and the maximum reverse current (IR) from 10 μA to 0.5 μA. These improvements help simplify equipment design and reduce overall power consumption. Furthermore, since the new CMZBxxA devices use the same M-FLAT package (2.4 mm x 4.7 mm x 0.98 mm) as the existing CMZBxx series, the upgrade requires no changes to the printed circuit board layout.
The 15 products in the range cover a Zener voltage (Vz) range from 12V (typical) to 51V (typical), allowing the use of a wide range of commonly used voltages.
The new products help improve equipment reliability by providing surge protection on power lines.
