for controlling brushed DC motors and load switching on power lines in consumer and industrial control equipment.
It utilizes Toshiba's UMOSVIIH process for the N-channel MOSFET and the UMOSVI process for the P-channel MOSFET. It comes in a compact TSOP6F package (2.9 mm × 2.8 mm × 0.8 mm) with flat leads for improved assembly efficiency.
The device achieves low on-state resistance (RDS(ON)) values of 46 mΩ (max.) (VGS = 10 V) for the N-channel MOSFET and 45 mΩ (max.) (VGS = -10 V) for the P-channel MOSFET. Because the RDS(ON) values are virtually identical, conduction losses are well balanced, simplifying circuit development for designers. Furthermore, integrating both types of MOSFETs into a single package reduces printed circuit board space, the number of components, and the bill of materials (BOM) cost.
With the launch of the SSM6L826R, Toshiba expands its TSOP6F dual MOSFET range to include three dual N-channel MOSFETs, one dual P-channel MOSFET, and two complementary (N+P) MOSFETs, giving engineers greater flexibility in selecting the optimal device for their designs.
ROHM launches the RS4P063BPHZG 100V MOSFET for automotive safety
ROHM has developed the RS4P063BPHZG, a 100V MOSFET optimized for automotive safety functions and protection circuits. The new product achieves an industry-leading* wide SOA (Safe Operating Area) across a broad voltage range in the standard HPLF5060 package...
