(high-voltage direct current). In this environment, ROHM's device was selected as a SiC power supply device compatible with the latest generation power supply systems.
As GPUs deliver ever-increasing performance and generative AI adoption expands, data center power consumption is rapidly rising. To address this challenge, the industry is shifting its focus to HVDC architectures to reduce power transmission losses. In these high-power, high-voltage environments, BBUs and CUs (capacitor units), which compensate for power at the server rack level, are playing an increasingly critical role in protecting systems and massive volumes of data from anomalies such as power outages or momentary interruptions.
The incorporated product is the SCT4013DLL, a 750V SiC MOSFET installed in the power supply section of a ±400V power architecture for AI servers. Leveraging the characteristics of SiC, this product offers high-temperature tolerance with a maximum junction temperature (Tj) of 175°C, enabling stable operation even in BBUs where heat generation increases with higher voltages and power density.
In the latest generation 800 VDC power architectures, the supply voltage delivered to the battery bank within the BBU is approximately 560 V. For this reason, ROHM's SiC MOSFETs with a nominal voltage of 750 V can also be used in these systems.
HVDC power supplies for next-generation AI servers require backup systems capable of instantaneously controlling high voltages and large currents with minimal power loss in the event of a failure. To meet these demanding requirements, SiC power devices that combine high-voltage capability, low losses, and high-temperature tolerance are expected to serve as key components at the core of power control.
With an eye toward the continued growth of the AI server and data center markets, ROHM will further strengthen the development and supply of power devices using SiC, GaN, and silicon. ROHM will also contribute to achieving greater energy efficiency and building a sustainable society by offering solutions that combine these power devices with analog integrated circuits and other technologies.
EcoSiC
™ is a brand of devices that utilize silicon carbide (SiC) and is attracting attention in the power device field by demonstrating performance even superior to that of silicon (Si). ROHM independently develops technologies essential to the evolution of SiC, from wafer fabrication and production processes to packaging and quality control methods. At the same time, we have implemented an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.
EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.
Related Information:
ROHM offers information on SiC power devices on its website, including a handy "Easy Component Finder" for selecting products based on specified conditions, as well as design templates that facilitate evaluation and implementation. See below for related technical materials and resources.
• Application Note: Discrete Packaging of 4th Generation SiC MOSFETs: Characteristics and Precautions for Circuit Design
• Application Note: Application Advantages of Using 4th Generation SiC MOSFETs
• White Paper: ROHM's 800VDC Architecture Solutions for AI Servers
• Special Dialogue: Data Center Power Constraints Intensify: Why Are Delta and ROHM Betting on High Voltage Direct Current (HVDC)?
