UFS devices with QLC technology offer higher bit density than traditional UFS TLC, making them ideal for mobile applications that require larger storage capacities. Advancements in driver technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance.
Leveraging these advancements, the new KIOXIA devices achieve substantial performance increases [2]. KIOXIA's UFS QLC devices increase sequential write speeds by 25%, random read speeds by 90%, and random write speeds by 95% compared to the previous generation (UFS 4.0/UFS QLC BiCS6) [3]. The write amplification factor (WAF) has also been improved to a maximum of 3.5x (with WriteBooster disabled).
KIOXIA's UFS QLC devices, ideal for smartphones and tablets, also support emerging product categories that demand higher capacity and performance, such as computers, networking, AR/VR, IoT, and AI devices.
Available in 512 gigabyte (GB) and 1 terabyte (TB) capacities, the new UFS 4.1 devices combine KIOXIA's advanced BiCS FLASH™ 3D flash memory and an integrated controller in a standard JEDEC package. KIOXIA's 8th generation BiCS FLASH™ 3D flash memory features Direct-Associated (CBA) CMOS technology, an architectural innovation that marks a radical shift in flash memory design.
Key features include:
● Compliance with the UFS 4.1 specification. UFS 4.1 is backward compatible with UFS 4.0 and UFS 3.1.
● KIOXIA's 8th generation BiCS FLASH™ 3D flash memory.
● WriteBooster support for significantly faster write speeds.
● Smaller package size compared to previous UFS QLC devices: from 11 × 13 mm to → 9 × 13 mm.
According to Axel Störmann, Chief Technology Officer and Vice President of KIOXIA Europe, “At KIOXIA, flash memory innovation is fundamental to meeting the growing demands for capacity and performance. With QLC UFS 4.1, the latest advancements in architecture and design translate into practical capabilities that help our customers address increasingly complex and diverse mobile and connected use cases.”
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