In the 600/750 V power FET class, Qorvo Gen 4 SiC FETs offer unmatched performance in key junction resistance and output capacitance values. Furthermore, in the 5.4 mΩ TOLL package, these devices have a junction resistance 4 to 10 times lower than the best Si MOSFETs, SiC MOSFETs, and GaN transistors in their class. The 750 V rating of the SiC FETs is also 100-150 volts higher than alternative technologies, providing significantly greater design headroom for handling voltage transients.

Anup Bhalla, chief engineer of Qorvo's Power Devices division, stated: "The launch of our 5.4 mΩ Gen4 SiC FETs in a TOLL package is an important step in our goal of providing designers with industry-leading performance and multiple device options. Customers working in industrial applications, in particular, need this combination of flexibility and cost-effective power design."

The TOLL package occupies 30% less space and, at 2.3 mm, is half the height of comparable D2PAK surface-mount alternatives. Despite the reduced size, advanced manufacturing techniques achieve an industry-leading junction-to-case thermal resistance of 0.1°C/W. The continuous current rating is 120 A up to a case temperature of 144°C, while the pulsed current rating is 588 A up to 0.5 milliseconds. Combined with the ultra-low inrush resistance and excellent transient thermal behavior, this results in an I²t rating approximately eight times better than that of a Si MOSFET in the same package, contributing to robustness and immunity to transient overloads while simplifying design. The TOLL package also includes a Kelvin source connection for reliable high-speed switching.

These Gen4 SiC FETs take advantage of Qorvo's cascaded circuit configuration, in which a SiC JFET is combined with a Si MOSFET to produce a device with all the efficiency benefits of widebandgap switching technology and the simpler gate drive of silicon MOSFETs.

Qorvo's TOLL-packaged 5.4 mΩ Gen4 SiC FET is included in FET-Jet™ Qorvo's free online calculator , which allows for instant evaluation of efficiency, component losses, and junction temperature rise of parts used in a wide variety of isolated/non-isolated AC/DC and DC/DC converter topologies. Individual and parallel devices can be compared under user-specified heat dissipation conditions to determine a solution.