Furthermore, the RDS(ON) x QGD, which is the figure of merit for MOSFET performance, improves by approximately 52%. Target applications include high-efficiency switched-mode power supplies in data centers, power conditioners for photovoltaic generators, and uninterruptible power supply systems.
The new product uses the popular TOLL package, which features a Kelvin connection for the signal source terminal. As a result, the inductance of the source wire has less impact, reducing switching oscillation and improving switching performance when the MOSFET operates at high gate speeds. The applied pin shaping ensures proper solder connections, increases assembly reliability, and facilitates visual inspection.
The maximum channel temperature (Tch) of the new product is 150°C. The RDS(ON) of 47mΩ is specified at a gate-source voltage of 10V.
The typical total gate charge (Qg), gate drain charge (Qgd), and input capacitance (Ciss) are 65 nC, 15 nC, and 3680 pF, respectively. These factors will allow the new device to switch at the fastest possible speeds.
Toshiba will continue to expand its range of 600V DTMOSVI series products, and the already launched 650V DTMOSVI series, to contribute to energy savings by reducing power loss in switched-mode power supplies.
