while the AEC-Q101 rated 750V SiC MOSFET line is intended for the high reliability needs of electric vehicle (EV) systems, such as the on-board charger (OBC) and the main traction inverter.
The new AOM015V75X2Q 750V αSiC MOSFET expands AOS's existing second-generation 1200V αSiC MOSFET and diode product line with a low RDS(ON) of up to 15mΩ in a standard TO-247-4L package, while maintaining a recommended gate drive voltage of +15V to ensure broad compatibility with existing gate driver solutions.
By minimizing internal gate resistance and optimizing cell design, AOS has engineered these devices to deliver ultra-fast switching speeds that are fully controllable with an external gate resistor. This advantage is also reflected in the standard switching figures of merit (FoM), such as RON x QGD and RON x QRR, which are improved compared to existing 750V SiC MOSFET solutions.
One of the advantages of these new αSiC MOSFETs is the significant performance increase in short-circuit withstand time (SCWT) compared to planar SiC MOSFETs. For many applications, and especially in electric vehicle inverters, a longer SCWT can greatly improve system robustness and give developers more design flexibility. To achieve an increased SCWT, it is usually necessary to also significantly increase the product die size, which can impact overall system costs. In AOS testing, these new 750V MOSFETs maintained similar or lower RON x A while demonstrating an increase of over 40% in SCWT compared to similarly sized competitor products.
"We are very excited to follow up our successful 1200V αSiC MOSFETs with these 650V and 750V automotive products. Our customers in the industrial, renewable energy, and smart electric vehicle sectors will now have a complete portfolio to select the right solution to support their wide range of product power levels at an even higher level of performance and efficiency," said David Sheridan, Vice President of SiC Products at AOS.
