Higher efficiency at higher speeds and improved system power density. The devices leverage a unique cascode SiC FET technology in which a normally-on SiC JFET is packaged together with a silicon MOSFET to produce a normally-off SiC FET. The FETs reduce the inductance of the compact internal connection loops, which, along with the included Kelvin source connection, reduces switching loss, enabling higher frequency operation and improved system power density. The FETs are optimized for applications such as onboard chargers, software-switched DC/DC converters, battery charging, and IT/server power supplies.
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Qorvo 750V UJ4C/SC SiC FET in D2PAK-7L Package for Industrial Applications
Mouser now sells UnitedSiC's (now Qorvo®) UJ4C/SC FETs in an industry-standard D2PAK-7L surface-mount package. The UJ4C/SC series devices are 750V silicon carbide (SiC) field-effect transistors (FETs) that take advantage of the D2PAK-7L package option to provide low switching loss
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