The four new MOSFETs (FMW20N60S1HF, FMW30N60S1HF, FMW47N60S1HF, FMW79N60S1HF) have been developed using a superjunction structure, which, unlike the conventional planar structure, allows for a significant reduction in connection resistance without reducing the device's voltage tolerance, leading to considerably lower power consumption. Furthermore, the surface design of the superjunction structure has been optimized to achieve low conduction and switching losses.
Fuji developed this Super J-MOS series in response to increased global environmental awareness, which has led to a growing demand for energy-efficient electronic devices. In particular, special emphasis has been placed on improving energy conversion efficiency in applications such as information and communications technology equipment: internet servers, uninterruptible power supplies, transmission equipment, and photovoltaic power converters.
The new Super J-MOS MOSFET transistors are available at rsonline.es with delivery in 24/48 hours.
