ROHM's power device portfolio spans both silicon and broadband technologies, including silicon carbide (SiC) and gallium nitride (GaN), providing a strategic pathway for data center designers. The company's silicon MOSFETs are already widely used in the automotive and industrial sectors, offering a cost-effective and reliable solution for today's power conversion needs. They are ideal for applications where price, efficiency, and reliability must be balanced, making them well-suited for the transitional stages of AI infrastructure development.
A prime example is the RY7P250BM, a 100V power MOSFET supported by leading global cloud providers and specifically designed for hot-swapping circuitry in 48V power systems—a critical component in AI servers. Key features include best-in-class SOA (Safe Operating Area) performance and ultra-low ON resistance (1.86 mΩ) in a compact 8080 package. These characteristics help reduce power loss and improve system reliability, crucial requirements for high-density, high-availability cloud platforms. As data centers migrate from 12V to 48V and beyond, hot-swapping capability becomes critical for maintaining uptime and protecting against inrush currents.
Industrial-grade rectification with minimal losses is an area where ROHM's SiC devices excel and align with NVIDIA's plans to begin large-scale deployment of its 800V HVDC data center architecture to power 1MW and larger IT racks. At the heart of NVIDIA's new infrastructure is the conversion of 13.8kV AC from the grid directly to 800V DC. This initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are limited by physical space, copper overhead, and conversion losses.
ROHM's SiC MOSFETs deliver superior performance in high-voltage, high-power environments, resulting in increased efficiency through reduced switching and conduction losses, enhanced thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics perfectly align with the requirements of NVIDIA's 800V HVDC architecture, which aims to reduce copper usage, minimize power losses, and simplify power conversion across the data center.
Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. While SiC is better suited for high-voltage, high-current applications, GaN offers exceptional performance in the 100 V to 650 V range, with superior breakdown field strength, low ON-state resistance, and ultrafast switching. ROHM’s comprehensive EcoGaN™ portfolio includes 150 V and 650 V GaN HEMTs, gate drivers, and integrated power stage ICs. Simultaneously, patented Nano Pulse Control™ technology further enhances switching performance by reducing pulse widths to as low as 2 ns. These innovations address the growing demand for smaller, more efficient power systems in AI data centers.
Beyond discrete devices, ROHM offers a range of high-power SiC modules, including molded packages with superior cooling, such as the HSDIP20, equipped with advanced fourth-generation SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Designed for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in the NVIDIA architecture. Their robust thermal performance and scalability make them ideal for 800V busways and MW-scale rack configurations.
The transition to an 800V HVDC infrastructure is a collaborative effort. ROHM is committed to working closely with industry leaders like NVIDIA, as well as data center operators and power system designers, to provide the fundamental silicon technologies needed for this next generation of AI factories. Our expertise in power semiconductors, particularly broadband materials like SiC and GaN, positions us as a key partner in developing solutions that are not only powerful but also contribute to a more sustainable and energy-efficient digital future.
