With onsemi's GaNEXUS GaN FETs, available from Mouser, higher operating frequencies and greater power density are achievable. Furthermore, their use helps reduce the number of magnetic components in power conversion applications across low, medium, high, and ultra-high voltage ranges. These enhancement-mode GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40 to 650 V, including the GaNEXUS 650 V smart GaN FETs with integrated protection for improved reliability and simplified system integration. GaNEXUS solutions are designed to enhance power conversion and management in modern power systems, simplifying complex designs, accelerating qualification and development, reducing thermal and cooling requirements, and optimizing performance across the entire power supply chain.
In low- and medium-voltage systems—such as AI servers, 48V intermediate bus converters (IBCs), battery backup units (BBUs), and motor controllers—the use of GaNEXUS helps reduce the size of magnetic components, offers higher power density, improves efficiency, thermal performance, and control stability, and reduces switching losses. In higher-voltage applications—such as AI power modules, high-voltage DC-DC converters, power factor correction (PFC), and LLC power stages—the use of GaNEXUS enables up to a 60% reduction in the size of magnetic components in resonant and high-frequency AC-DC stages, increases power density in PFC, LLC, and high-voltage DC-DC architectures, and lowers thermal and operating costs.
