The sixth generation of CSTBT (Carrier-Stored Trench-gate Bipolar Transistor) modules reduces collector-emitter voltage saturation by 15% compared to 5th generation MPD modules and gate capacitance by 30% to 50%. Furthermore, the maximum junction temperature is raised to +175°C.
The new generation of MPD IGBT modules is compatible with 5th generation IGBT modules in terms of dimensions, shape, and pin configuration. The insulation voltage has been increased to 4000V. The modules in the new series are available as CM900DUC-24S (1200V/900A), CM1400DUC-24S (1200V/1400A), and CM1000DUC-34SA (1700V/1000A).
The new IGBT series is fully RoHS compliant.
Power generation systems are increasingly shifting to natural energy sources, such as wind and solar power, as part of efforts to limit carbon dioxide (CO2) emissions attributed to global warming. The sixth generation of the MPD series addresses the growing need for robust power conversion equipment and large-scale megawatt-type systems.
