Simulation is a very valuable tool for designers, as it reduces the number of prototypes needed, saving the need for repetitions, thus increasing development efficiency and reducing overall time, cost and risk.
In the demanding world of power electronics and automotive design, there is a strong demand for preliminary predictions of EMI performance and whole-system power dissipation. This leads to a growing demand for SPICE models for power semiconductors that can predict power conversion efficiencies, EMI, and other relevant parameters.
These new SPICE G2 models for discrete power devices are created using the macro model format, which combines multiple compact models to fit the device structure, representing electrical characteristics with a few nonlinear elements and an arbitrary continuous function. With this approach, switching simulations are more accurate and more closely approximate real-world measurements by improving the reproducibility of high-current domain characteristics of the ID-VDS curve, including the voltage-dependent characteristics of parasitic capacitance.
Available on the Toshiba website, the G2 models cover low-voltage MOSFETs (12V-300V) and medium- and high-voltage MOSFETs (400V to 900V). Versions are available for PSpice and LTSpice.
